Preparation and characterization of CulnS2 nanocrystals for photovoltaic materials
Identifieur interne : 000676 ( Main/Repository ); précédent : 000675; suivant : 000677Preparation and characterization of CulnS2 nanocrystals for photovoltaic materials
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Abstract
Copper indium disulphide (CIS) nanocrystals (NCs) were prepared using a one-pot synthesis. The stoichiometry was optimized based on its current density as measured by photoelectrochemical (PEC) experiments at interfaces between NC films deposited on ITO and 0.1 M methyl viologen dichloride (MV2+) solution. This method also offers insight into the kinetics of the photoreaction. A copper poor sulphur rich starting ratio was found to produce a copper-rich, indium-poor and slightly sulphur rich material. Further NC characterization was performed with SEM and TEM to investigate the morphology and crystallinity of the 30-70 nm NCs. The oxidation states of the individual elements were determined to be I, III, and 2- for Cu, In and S, respectively. Characteristics of optimal as-prepared NCs were found to be compatible among high functioning absorbing layers.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Preparation and characterization of CulnS<sub>2</sub> nanocrystals for photovoltaic materials</title><author><name sortKey="Tapley, Amy" uniqKey="Tapley A">Amy Tapley</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemistry, The University of Western Ontario, 1151 Richmond Street</s1><s2>London, Ontario N6A 5B7</s2><s3>CAN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>London, Ontario N6A 5B7</wicri:noRegion></affiliation></author><author><name sortKey="Vaccarello, Daniel" uniqKey="Vaccarello D">Daniel Vaccarello</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemistry, The University of Western Ontario, 1151 Richmond Street</s1><s2>London, Ontario N6A 5B7</s2><s3>CAN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>London, Ontario N6A 5B7</wicri:noRegion></affiliation></author><author><name sortKey="Hedges, Jason" uniqKey="Hedges J">Jason Hedges</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemistry, The University of Western Ontario, 1151 Richmond Street</s1><s2>London, Ontario N6A 5B7</s2><s3>CAN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>London, Ontario N6A 5B7</wicri:noRegion></affiliation></author><author><name>FALONG JIA</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemistry, The University of Western Ontario, 1151 Richmond Street</s1><s2>London, Ontario N6A 5B7</s2><s3>CAN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>London, Ontario N6A 5B7</wicri:noRegion></affiliation></author><author><name sortKey="Love, David A" uniqKey="Love D">David A. Love</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Rosstech Inc., 71 15th Line South</s1><s2>Orillia, ON L3V 6H1</s2><s3>CAN</s3><sZ>5 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Orillia, ON L3V 6H1</wicri:noRegion></affiliation></author><author><name>ZHIFENG DING</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemistry, The University of Western Ontario, 1151 Richmond Street</s1><s2>London, Ontario N6A 5B7</s2><s3>CAN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>London, Ontario N6A 5B7</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0169773</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0169773 INIST</idno><idno type="RBID">Pascal:13-0169773</idno><idno type="wicri:Area/Main/Corpus">000E48</idno><idno type="wicri:Area/Main/Repository">000676</idno></publicationStmt><seriesStmt><idno type="ISSN">1463-9076</idno><title level="j" type="abbreviated">PCCP, Phys. chem. chem. phys. : (Print)</title><title level="j" type="main">PCCP. Physical chemistry chemical physics : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Characterization</term><term>Copper Sulfides</term><term>Indium Sulfides</term><term>Nanocrystal</term><term>Photoelectrochemistry</term><term>Preparation</term><term>Ternary compound</term><term>Transition element compounds</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Préparation</term><term>Caractérisation</term><term>Nanocristal</term><term>Cuivre Sulfure</term><term>Indium Sulfure</term><term>Composé ternaire</term><term>Composé de métal de transition</term><term>Photoélectrochimie</term><term>CuInS2</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Copper indium disulphide (CIS) nanocrystals (NCs) were prepared using a one-pot synthesis. The stoichiometry was optimized based on its current density as measured by photoelectrochemical (PEC) experiments at interfaces between NC films deposited on ITO and 0.1 M methyl viologen dichloride (MV<sup>2+</sup>) solution. This method also offers insight into the kinetics of the photoreaction. A copper poor sulphur rich starting ratio was found to produce a copper-rich, indium-poor and slightly sulphur rich material. Further NC characterization was performed with SEM and TEM to investigate the morphology and crystallinity of the 30-70 nm NCs. The oxidation states of the individual elements were determined to be I, III, and 2- for Cu, In and S, respectively. Characteristics of optimal as-prepared NCs were found to be compatible among high functioning absorbing layers.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1463-9076</s0></fA01><fA03 i2="1"><s0>PCCP, Phys. chem. chem. phys. : (Print)</s0></fA03><fA05><s2>15</s2></fA05><fA06><s2>5</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Preparation and characterization of CulnS<sub>2</sub> nanocrystals for photovoltaic materials</s1></fA08><fA11 i1="01" i2="1"><s1>TAPLEY (Amy)</s1></fA11><fA11 i1="02" i2="1"><s1>VACCARELLO (Daniel)</s1></fA11><fA11 i1="03" i2="1"><s1>HEDGES (Jason)</s1></fA11><fA11 i1="04" i2="1"><s1>FALONG JIA</s1></fA11><fA11 i1="05" i2="1"><s1>LOVE (David A.)</s1></fA11><fA11 i1="06" i2="1"><s1>ZHIFENG DING</s1></fA11><fA14 i1="01"><s1>Department of Chemistry, The University of Western Ontario, 1151 Richmond Street</s1><s2>London, Ontario N6A 5B7</s2><s3>CAN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Rosstech Inc., 71 15th Line South</s1><s2>Orillia, ON L3V 6H1</s2><s3>CAN</s3><sZ>5 aut.</sZ></fA14><fA20><s1>1431-1436</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>26801</s2><s5>354000173282050120</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>35 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0169773</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>PCCP. Physical chemistry chemical physics : (Print)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Copper indium disulphide (CIS) nanocrystals (NCs) were prepared using a one-pot synthesis. The stoichiometry was optimized based on its current density as measured by photoelectrochemical (PEC) experiments at interfaces between NC films deposited on ITO and 0.1 M methyl viologen dichloride (MV<sup>2+</sup>) solution. This method also offers insight into the kinetics of the photoreaction. A copper poor sulphur rich starting ratio was found to produce a copper-rich, indium-poor and slightly sulphur rich material. Further NC characterization was performed with SEM and TEM to investigate the morphology and crystallinity of the 30-70 nm NCs. The oxidation states of the individual elements were determined to be I, III, and 2- for Cu, In and S, respectively. 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